Infineon BSC070N10NS5ATMA1: High-Performance OptiMOS™ 5 Power MOSFET for Advanced Switching Applications

The relentless pursuit of higher efficiency, power density, and reliability in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon Technologies' BSC070N10NS5ATMA1, a benchmark N-channel power MOSFET that exemplifies the superior performance of the OptiMOS™ 5 100 V technology platform. This component is engineered to meet the rigorous demands of advanced switching applications, from server and telecom power supplies to industrial motor drives and high-performance computing.

A key differentiator of the OptiMOS™ 5 family is its exceptional balance between ultra-low static and switching losses. The BSC070N10NS5ATMA1, with a maximum RDS(on) of just 7.0 mΩ, drastically reduces conduction losses. This minimal on-state resistance ensures that less energy is wasted as heat, directly contributing to higher overall system efficiency and enabling cooler operation. This is particularly critical in space-constrained applications where thermal management is a significant challenge.

Furthermore, the device’s outstanding switching performance allows for operation at higher frequencies. This capability is a cornerstone for designers aiming to reduce the size and value of passive components like inductors and capacitors, thereby increasing the power density of the final design. The MOSFET's optimized gate charge (Qg) ensures swift turn-on and turn-off transitions, which is vital for minimizing switching losses in high-frequency circuits such as synchronous rectification and DC-DC converters.

The robustness of the BSC070N10NS5ATMA1 is another hallmark of its design. It features a logic-level gate drive, which simplifies interface with modern microcontrollers and PWM ICs, and offers an excellent body diode robustness for handling hard commutation events. Its high peak current capability and avalanche ruggedness make it a reliable choice in harsh operating environments, ensuring long-term system durability.

Packaged in the space-efficient, thermally enhanced SuperSO8 (LFPAK) package, this MOSFET offers a low profile and a very low junction-to-case thermal resistance (RthJC). This advanced packaging technology is instrumental in dissipating heat effectively from the silicon die to the PCB, further supporting reliable operation at high power levels.

ICGOOODFIND: The Infineon BSC070N10NS5ATMA1 stands as a premier solution for engineers pushing the boundaries of power conversion. Its industry-leading combination of ultra-low RDS(on), superior switching characteristics, and robust packaging makes it an indispensable component for designing next-generation, high-efficiency power systems.

Keywords: OptiMOS™ 5, Ultra-low RDS(on), High-frequency switching, Synchronous rectification, SuperSO8 package.