Infineon IPD60R360P7SAUMA1: Redefining High-Efficiency Power Conversion with 60mΩ and 600V CoolMOS Technology

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics is driven by innovations in semiconductor technology. At the forefront of this evolution is Infineon Technologies' IPD60R360P7SAUMA1, a 600V CoolMOS™ power transistor that sets a new benchmark with its ultra-low on-state resistance (RDS(on)) of just 60mΩ. This device is engineered to meet the demanding requirements of modern switched-mode power supplies (SMPS), industrial drives, and renewable energy systems.

Unmatched Performance through Superior Technology

Built on Infineon’s advanced Superjunction (CoolMOS™) technology, the IPD60R360P7SAUMA1 achieves a remarkable reduction in conduction losses. The incredibly low RDS(on) ensures minimal voltage drop across the drain and source during operation, directly translating into higher efficiency and reduced heat generation. This allows designers to either push the limits of power output or create more compact systems without the need for extensive cooling solutions. The 600V voltage rating provides a robust safety margin for operations in off-line applications, including power factor correction (PFC) stages and LLC resonant converters, ensuring resilience against voltage spikes and transients.

Designed for Optimal Switching

Beyond low conduction losses, this CoolMOS™ transistor excels in dynamic performance. It features low gate charge (Qg) and exceptional switching characteristics, which are critical for minimizing switching losses at high frequencies. This enables systems to operate at higher switching speeds, which in turn reduces the size of passive components like magnetics and capacitors. The result is a significant increase in overall power density, a key goal for next-generation adapters, server PSUs, and telecom power systems.

Enhanced Reliability and System Integration

The IPD60R360P7SAUMA1 is housed in a TO-220 FullPak package, which offers a creepage distance suited for industrial applications. This package is fully isolated, simplifying the mechanical mounting process by eliminating the need for an additional insulation kit between the device and the heat sink. This not only reduces the bill of materials but also improves thermal performance and system reliability. Infineon’s rigorous quality control ensures that the device delivers consistent performance even under strenuous operating conditions, providing engineers with a highly reliable component for mission-critical applications.

ICGOOODFIND

The Infineon IPD60R360P7SAUMA1 stands as a pinnacle of power transistor design, masterfully balancing ultra-low conduction losses, high voltage capability, and fast switching speed. It is an ideal solution for engineers aiming to maximize efficiency and power density in their high-performance power conversion designs.

Keywords:

1. CoolMOS Technology

2. 60mΩ RDS(on)

3. 600V Rating

4. High Efficiency

5. Power Density