Infineon IPW65R080CFDA: Redefining High-Voltage Power Conversion Efficiency

The Infineon IPW65R080CFDA is a 650V, 80mΩ Hard-Switching CoolMOS™ CFD7 Power MOSFET engineered to deliver exceptional performance in demanding power electronics applications. As part of Infineon’s latest CFD7 family, this device combines ultra-low on-state resistance with minimized switching losses, making it an ideal solution for high-efficiency and high-frequency designs.

A key innovation in this MOSFET is the incorporation of CoolMOS™ CFD7 technology, which integrates a fast body diode and optimized reverse recovery characteristics. This feature is critical in hard-switching topologies such as PFC (Power Factor Correction) circuits, SMPS (Switch-Mode Power Supplies), and motor drive systems, where switching losses traditionally limit performance. The reduced Q_rr (reverse recovery charge) significantly decreases diode-related losses, enhancing overall system reliability.

The MOSFET’s 80mΩ R_DS(on) ensures minimal conduction losses, even under high-current conditions. Combined with a reduced figure-of-merit (R_DS(on) x Q_g), the device allows for higher switching frequencies without compromising thermal management. This enables designers to shrink the size of passive components, leading to more compact and cost-effective power systems.

Thermal performance is another highlight. The TO-247 package offers superior heat dissipation, supporting sustained operation in high-power environments. Additionally, the MOSFET’s avalanche ruggedness and high noise immunity ensure robust operation in industrial settings.

ICGOOODFIND:

The Infineon IPW65R080CFDA sets a new benchmark for high-voltage MOSFETs with its advanced CoolMOS™ CFD7 technology, offering an optimal balance of low conduction loss, superior switching behavior, and thermal efficiency—making it a top choice for next-generation power conversion systems.

---

Keywords:

CoolMOS™ CFD7

Hard-Switching

650V MOSFET

80mΩ R_DS(on)

Reverse Recovery Charge