Infineon IPB097N08N3G: High-Performance OptiMOS 5 Power MOSFET for Automotive and Industrial Applications
The relentless push for higher efficiency, greater power density, and enhanced reliability in power electronics is a defining trend across the automotive and industrial sectors. Addressing these demanding requirements, Infineon Technologies has introduced the IPB097N08N3G, a benchmark-setting power MOSFET leveraging the advanced OptiMOS 5 80 V technology. This device is engineered to deliver superior performance in a compact package, making it an ideal solution for a wide array of challenging applications.
At the heart of the IPB097N08N3G's exceptional performance is its incredibly low on-state resistance (R DS(on)) of just 0.97 mΩ (max. @ V GS = 10 V). This ultra-low resistance is a critical factor in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. For applications like electric power steering (EPS), braking systems, and 48V mild-hybrid DC-DC converters, this efficiency gain is paramount for extending range and improving overall vehicle performance. In industrial settings, this benefit is crucial for motor drives and robust power supplies where energy savings and thermal management are top priorities.
Beyond its low R DS(on), the MOSFET is characterized by outstanding switching performance. The device features low gate charge (Q G) and low figures of merit, which ensure fast switching speeds and significantly reduced switching losses. This allows systems to operate at higher frequencies, enabling the use of smaller passive components like inductors and capacitors. The result is a substantial increase in power density, allowing engineers to design more compact and lighter systems without compromising on power or performance.
Recognizing the harsh operating environments of its target applications, the IPB097N08N3G is designed with maximum robustness and reliability. It offers an extended avalanche ruggedness and a high maximum junction temperature (T J = 175 °C). The device is also qualified according to the stringent AEC-Q101 standard, guaranteeing its suitability for the demanding automotive environment where operational safety is non-negotiable. Its high immunity against gate oxide damage further ensures long-term operational stability.
Housed in the space-saving PG-TO263-7 (D2PAK) package, the MOSFET provides an excellent thermal footprint. The package is designed for low thermal resistance, facilitating efficient heat dissipation away from the silicon die. This makes it easier for designers to manage thermals, especially in space-constrained applications where cooling is a significant challenge.
ICGOOODFIND: The Infineon IPB097N08N3G stands out as a premier power MOSFET that masterfully balances ultra-low losses, high switching speed, and unwavering robustness. Its exceptional electrical characteristics, certified for automotive use, make it a top-tier choice for designers aiming to push the boundaries of efficiency and power density in next-generation automotive and industrial power systems.
Keywords: OptiMOS 5, Power MOSFET, Automotive Grade (AEC-Q101), Low RDS(on), High Power Density.
