Infineon IPB240N04S4-R9: A 40V 240A OptiMOS Power MOSFET for High-Performance Applications
In the realm of power electronics, achieving higher efficiency, greater power density, and superior thermal performance is a constant pursuit. Addressing these demanding requirements, Infineon Technologies introduces the IPB240N04S4-R9, a benchmark-setting OptiMOS power MOSFET engineered for the most challenging high-performance applications. This device exemplifies the cutting edge of power semiconductor technology, combining extremely low on-state resistance with exceptional switching performance to minimize losses and maximize system efficiency.
Housed in an innovative PQFN 5x6 mm package, the IPB240N04S4-R9 offers an impressive current rating of 240A (ID) with a 40V drain-source voltage (VDS). This robust current handling capability makes it an ideal candidate for high-current DC-DC conversion stages in server and telecom power supplies, as well as for motor control and solenoid driving in industrial automation. The cornerstone of its performance is the ultra-low RDS(on) of just 0.99 mΩ (max). This remarkably low resistance directly translates to reduced conduction losses, which is paramount for improving overall system efficiency and managing thermal dissipation, especially in space-constrained designs.
Beyond its static performance, the device is optimized for dynamic operation. The low gate charge (Qg) and figures of merit (FOMs like RDS(on)Qg) ensure minimal switching losses at high frequencies. This allows power supply designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors to achieve a higher power density. The advanced package technology provides a very low parasitic inductance and an efficient bottom-side cooling path. The exposed thermal pad ensures optimal heat transfer from the silicon die directly to the PCB, allowing the system to manage the high power dissipation effectively.
ICGOOFind: The Infineon IPB240N04S4-R9 stands as a superior solution for designers pushing the limits of power conversion. Its combination of an ultra-low 0.99 mΩ RDS(on), a high 240A current rating in a compact form factor, and excellent thermal properties makes it a top-tier choice for creating more efficient, powerful, and compact next-generation power systems in data center, automotive, and industrial environments.
Keywords: OptiMOS, Ultra-Low RDS(on), High-Current, Power Density, PQFN Package.
