Infineon IQE050N08NM5ATMA1 80 V OptiMOS 5 Power MOSFET: Datasheet and Application Analysis

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. A prime example is the Infineon IQE050N08NM5ATMA1, an 80 V N-channel power MOSFET from the esteemed OptiMOS™ 5 technology platform. This device exemplifies the significant strides made in reducing power losses in applications ranging from industrial motor drives and solar inverters to modern DC-DC converters.

A deep dive into its datasheet reveals a component engineered for exceptional performance. The standout feature is its ultra-low typical on-state resistance (R DS(on)) of just 1.6 mΩ at 10 V VGS. This minimal resistance is the cornerstone of its high efficiency, as it directly translates to reduced conduction losses when the MOSFET is fully switched on. This allows for more current handling in a smaller footprint, significantly boosting the power density of the overall design.

Furthermore, the OptiMOS™ 5 technology delivers superior switching performance. The device boasts an optimized gate charge (Q G) and figure of merit (FOM, R DS(on) Q G). This balance ensures that the transistor can switch states very quickly with minimal energy required to drive the gate, thereby reducing switching losses—a critical advantage in high-frequency SMPS and PWM motor control circuits. The 80 V drain-source voltage rating offers a comfortable safety margin in 48 V bus systems, a common voltage in telecom and data center infrastructure.

The benefits extend beyond raw electrical characteristics. The component is housed in a PQFN 5x6 mm (SuperSO8) package, which offers an excellent power-to-size ratio. This package features an exposed top-side cooling pad, facilitating efficient heat dissipation away from the die directly into a heatsink or the PCB. This superior thermal management is vital for maintaining performance and long-term reliability under high-stress conditions.

In practical application, the IQE050N08NM5ATMA1 is a versatile solution. In synchronous rectification stages of switch-mode power supplies (SMPS), its low R DS(on) minimizes the voltage drop, replacing traditional diodes to drastically cut losses. For motor control and driving, its robust design and fast switching enable precise PWM control of brushless DC (BLDC) motors with high torque and efficiency. It is also an ideal candidate for OR-ing and hot-swap circuits in server and networking equipment, where its voltage rating and robustness are key assets.

ICGOODFIND: The Infineon IQE050N08NM5ATMA1 OptiMOS™ 5 MOSFET sets a high bar for performance in its class. Its combination of ultra-low on-state resistance, excellent switching characteristics, and advanced thermally-enhanced packaging makes it a top-tier choice for designers aiming to maximize efficiency and power density in next-generation 48 V and lower high-power applications.

Keywords: OptiMOS™ 5, Ultra-low RDS(on), Synchronous Rectification, Power Density, PQFN 5x6 Package.