Infineon IGW15N120H3: A High-Performance IGBT for Power Switching Applications
The demand for efficient and reliable power switching is at the core of modern electronic systems, ranging from industrial motor drives and renewable energy inverters to uninterruptible power supplies (UPS). Meeting this demand requires robust semiconductor devices that can operate efficiently at high voltages and currents while minimizing losses. The Infineon IGW15N120H3 stands out as a premier Insulated Gate Bipolar Transistor (IGBT) engineered specifically for these challenging high-performance applications.
This device is a member of Infineon's proven TRENCHSTOP™ IGBT3 series, which is renowned for its superior technology. The IGW15N120H3 is designed with a nominal voltage of 1200 V and a collector current of 30 A at 100°C, making it exceptionally suited for bridge circuits and other configurations in the power range of several kilowatts. A key to its high performance is the low saturation voltage (VCE(sat)) of typically 1.85 V. This low on-state voltage directly translates to reduced conduction losses, enhancing the overall efficiency of the system and reducing the need for extensive thermal management.
Furthermore, the device exhibits excellent switching characteristics. It achieves a fine balance between low turn-on and turn-off losses (Eon and Eoff). This is crucial for high-frequency switching applications, as it allows for higher operating frequencies without a prohibitive increase in switching losses, leading to smaller magnetic components and more compact system designs.
The IGW15N120H3 also features a robust and rugged design. It offers short-circuit withstand time of up to 5 µs, providing a critical safety margin in fault conditions. The integrated anti-parallel emitter-controlled diode ensures soft reverse recovery behavior, which minimizes voltage overshoots and electromagnetic interference (EMI), contributing to system reliability. Housed in a TO-247 package, this IGBT offers low thermal resistance for effective heat dissipation, ensuring stable operation even under continuous high-load conditions.
In practical terms, these attributes make the IGW15N120H3 an ideal choice for designers aiming to build efficient, compact, and reliable power conversion systems. Its combination of low losses, high ruggedness, and proven technology provides a significant advantage in achieving high power density and efficiency targets.
ICGOOODFIND: The Infineon IGW15N120H3 is a top-tier IGBT that masterfully combines high voltage capability, low conduction and switching losses, and exceptional ruggedness. It is an outstanding component for engineers designing high-efficiency and high-reliability power electronics in industrial and energy applications.
Keywords: IGBT, High Voltage, Low Saturation Voltage, Power Switching, TRENCHSTOP™ Technology
