Infineon IPD060N03LGATMA1: 60V Single N-Channel HEXFET Power MOSFET in a SuperSO8 Package

The relentless pursuit of higher power density and efficiency in modern electronics demands components that deliver exceptional performance within minimal space. Addressing this challenge, the Infineon IPD060N03LGATMA1 stands out as a high-performance N-Channel power MOSFET, engineered to optimize a wide range of power conversion and management applications.

Encased in the compact SuperSO8 (SSO-8) package, this MOSFET is a testament to the principle of doing more with less. The package's footprint is similar to a standard SO-8 but features a significantly improved thermal profile. Its exposed pad allows for superior heat dissipation directly from the die to the PCB, enabling higher power handling and increased reliability in space-constrained designs. This makes it an ideal candidate for applications where board real estate is at a premium, such as in advanced automotive systems, compact DC-DC converters, and load switching modules.

At its core, the device leverages Infineon's proven HEXFET technology. This technology is renowned for its low gate charge (Qg) and outstanding switching characteristics. The IPD060N03LGATMA1 boasts an impressively low on-state resistance (RDS(on)) of just 2.3 mΩ at a 10V gate drive. This ultra-low resistance is crucial for minimizing conduction losses, which directly translates to higher efficiency, reduced heat generation, and improved overall system performance. With a voltage rating of 60V, it is perfectly suited for 48V intermediate bus architectures and 12V/24V battery-powered systems commonly found in automotive, industrial, and telecom environments.

Furthermore, the MOSFET is characterized by its low gate drive requirements, which simplifies driver circuit design and allows for faster switching speeds. This feature is particularly beneficial in high-frequency switch-mode power supplies (SMPS), where reducing switching losses is paramount to achieving peak efficiency.

ICGOOODFIND: The Infineon IPD060N03LGATMA1 is a superior component that masterfully combines the space-saving advantages of the SuperSO8 package with the high-efficiency performance of HEXFET technology. Its ultra-low RDS(on) and excellent thermal characteristics make it an indispensable solution for designers aiming to push the boundaries of power density and energy efficiency in next-generation automotive, industrial, and computing applications.

Keywords: HEXFET Technology, SuperSO8 Package, Low RDS(on), Power Density, High Efficiency.