Infineon IPB042N10N3: A High-Performance 100V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPB042N10N3 stands out as a premier solution, engineered to meet the rigorous demands of modern high-efficiency applications. As part of Infineon's esteemed OptiMOS™ power MOSFET family, this 100V N-channel transistor is designed to deliver exceptional performance in a compact package.

A key highlight of the IPB042N10N3 is its extremely low on-state resistance (RDS(on)) of just 4.2 mΩ maximum. This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. Whether deployed in synchronous rectification, DC-DC converters, or motor control systems, this attribute ensures that more power is delivered to the load with minimal waste.

The device is housed in the advanced TO-Leadless (TOLL) package, which offers a significantly reduced footprint compared to traditional packages like D2PAK. This makes it an ideal choice for space-constrained applications without compromising on power handling or thermal performance. The package's superior thermal characteristics allow for effective heat dissipation, enabling higher power density designs and improved reliability under continuous operation.

Furthermore, the IPB042N10N3 features optimized switching performance, which helps in reducing switching losses at high frequencies. This is particularly beneficial in switch-mode power supplies (SMPS) and automotive applications, where efficiency across a wide load range is essential. The MOSFET’s robust design ensures high avalanche ruggedness and a wide safe operating area (SOA), providing designers with a margin of safety in demanding environments.

ICGOOODFIND: The Infineon IPB042N10N3 is a top-tier 100V power MOSFET that combines ultra-low RDS(on), excellent thermal management via the TOLL package, and superior switching characteristics. It is an optimal component for enhancing efficiency and power density in a variety of high-performance applications.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), TOLL Package, OptiMOS™